BE (National Institute of Science and Technology (NIST))

M.Tech (Biju Patnaik University of Technology (BPUT))

PhD (Biju Patnaik University of Technology (BPUT))

Semiconductor Device Modeling, VLSI

24 years

VLSI, VLSI Technology, Basic Electronics, Analog Electronics, Digital Electronics, DSP, IP, PCB Design, COA, DVLSI (M. Tech.) etc

M.Tech-12

PhD-2 (1-completed, 1-continuing)

IEEE (Annual)

ISTE (Life Member)

1. Pattnaik, G., Mohapatra, M., Mohanty, B. “Design and performance analysis of 70 nm GaN HEMT with AlGaN back barrier for V-band nanoelectronics applications”,Microsystem Technologies, 2025, 31 (12), pp. 3715-3731
2. Pattnaik, G., Mohapatra, M., “Design and Characterization of High Breakdown Voltage Field Plated GaN HEMT Device for High Power Applications”, Recent Advances in Electrical and Electronic Engineering, 2025,18(9), pp.1649-1960
3. Pattnaik, G., Mohapatra, M. , “GaN HEMT for high-performance applications: A revolutionary technology”, Recent Advances in Electrical and Electronic Engineering, 2024, 17(8), pp.737-762
4. Pattnaik, G., Mohapatra, M. , “Effect of Field Plate on Device Performance of Wide Bandgap HEMT”, Recent Advances in Electrical and Electronic Engineering, 2023, 16(4), pp.460-470
5. Pattnaik, G., Mohapatra, M. , “Design of AlGaN/GaN HEMT Device with InGaN Back Barrier for RF Applications”, 2023 International Conference on Communication, Circuits, and Systems, IC3S 2023, 2023
6. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. , “Hetero Channel Double Gate   MOSFET for Label-free Biosensing Application”, Silicon, 2022, 14(13), pp. 8109-8118
7. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. ,”Impact of biomolecules position and filling area on the sensitivity of hetero stack gate MOSFET”, Microelectronics Journal,2022, 126,105504
8. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. , “Dielectrically Modulated Hetero Channel Double Gate MOSFET as a Label Free Biosensor”, Transactions on Electrical and Electronic Materials, 2022,23(2), pp. 156-163
9. Pattnaik, G., Mohapatra, M.,“Design Of Asymmetric W-Shaped Quantum Well Using InGaN Back Barrier For Enhanced Performance Of GaN HEMT”, Neuro Quantology,2022, 20(9), pp.5367-5379

10. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. , “Impact of bio-target location and their fill-in factor on the sensitivity of hetero channel double gate MOSFET label-free biosensor”, Advances in Natural Sciences: Nanoscience and Nanotechnology, 2021, 12(2), 025012

11. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. , “Impact of source side cavity on sensitivity of hetero channel double Gate MOSFET biosensor”, Proceedings of 4th International Conference on 2021 Devices for Integrated Circuit, DevIC 2021, 2021, pp. 41–44, 9455937
12. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. , “High-Performance Exploration of Buried Channel In_0.53Ga_0.47/InP Stepped Poly Gate MOSFET Using Asymmetric Underlap Gate Spacer”, IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India), 2022,39(6), pp. 1372-1382
13. Pattnaik, G., Mohapatra, M. , “Design of AlGaAs/InGaAs/GaAs-Based PHEMT for High Frequency Application”, Lecture Notes in Electrical Engineering, Volume 728 LNEE, Pages 329 – 337,2021
14. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. , “High Speed Buried Channel In_0.53Ga_0.47As/InP MOSFET with Corner Spacer for Low Power Applications”,  Proceedings of 2nd International Conference on VLSI Device, Circuit and System, VLSI DCS 2020, 2020.

15. Mohanty, S.S., Mishra, S., Mohapatra, M., Mishra, G.P. , “High Performance and Reliability Analysis of Implant Free Composite Channel In_0.53Ga_0.47As/InAs/In_0.53Ga_0.47As Delta-Doped MOSFET”, Iranian Journal of Science and Technology – Transactions of Electrical Engineering, 2021,45(2), pp. 425-434

16. M. Mohapatra and A. K. Panda, “ Nano Scale Dual Gate InAlAs/InGaAs  HEMT with improved Characteristics”, International Journal of  Electronics Letters.2020, 8(2), pp. 180–193
17. M. Mohapatra , T.  De and A. K. Panda , “Nanoscale T-shaped AlGaN/GaN HEMT with improved DC and RF performance”, Int. J. Nanoparticles , 2019, 11(2), pp. 113–129
18. M.  Mohapatra, A. Sahu, S.  R.  Panda, S.  Das, T.  Sahu and  A.  K.  Panda, “Nonlinear electron transport in GaAs/InGaAs symmetric double quantum well pseudomorphic-HEMT structure”, Japanese Journal of Applied Physics, vol.  56, pp. 064101-1-5, 2017
19. S. Das, M. Mohapatra, R.  K. Nayak, A.  K. Panda and T. Sahu, “Improved two dimensional electron mobility in asymmetric barrier delta-doped GaAs/AlGaAs modulation-doped field-effect transistor structures”, Japanese Journal of Applied Physics, vol. 56, pp. 034001-1-7, 2017
20. M.  Mohapatra and A. K. Panda, “35nm InAlAs/InGaAs based Single gate and dual gate High Electron Mobility Transistor: A comparison”, Advanced Science Letters, vol. 22, no.2, pp. 540-544, 2016
21. M. Mohapatra, N. Shukla and A.  K. Panda , “Delay Analysis of ultra-high speed InAlAs/InGaAs High Electron Mobility Transistor”, International Journal of Nano and Biomaterials, vol. 5, no. 4, pp. 206-217, 2014
22. M. Mohapatra, N. Shukla and  A. K. Panda , “Ultra High Speed InAlAs/InGaAs High Electron Mobility Transistor ”, (published as a Book Chapter in Intelligent Computing, Communication and Devices, Volume 308 of the series Advances in Intelligent Systems and Computing, Springer India 2015),  pp. 535-543
23. M. Mohapatra, F. Ali, A. K. Panda, S. K. Kamilla, “Impact of In_xAl_yGa_1-x-yN layer on GaSb/AlGaAs High Electron Mobility Transistor”, Advanced Science  Letters, vol.20, No.3-4, PP.635-637,March, 2014
24. N. Shukla, M. Mohapatra and A. K. Panda, “Ultra Submicrometer InAlAs/InGaAs HEMT”, International Journal of Scientific & Engineering Research, vol. 5, no. 5, pp. 1-5, 2014
25. S. Sahu, M. Mohapatra and A. K. Panda, “DC & RF Performance Evaluation of nano scale InAlGaN/GaN HEMT”, International Journal of Scientific & Engineering Research, vol. 5, no. 5, pp. 6-10, 2014
26. L. Sahoo, M. Mohapatra and A. K. Panda, “ Design and Investigation of DC and Microwave Characteristics of InGaP/InGaAs/GaAs Dual Channel Pseudomorphic HEMT (DC-PHEMT)”, UACEE International Journal of Advancements in Electronics and Electrical Engineering( IJAEE), vol. 2, no. 3, pp. 16-19, 2013
27. T. K. Das, M. Mohapatra and A. K. Panda, “DC Characteristics and RF performance comparison between field-plated and non field-plated devices under different bias conditions,” UACEE International Journal of Advances in Computer Networks and its Security (IJCNS), vol.3, no. 3, pp.1-5, 2013
28. M. Mohapatra and A. K. Panda, “Design and Simulation of AlGaAs/InGaAs/GaAs based Pseudomorphic HEMT using SILVACO ATLAS^TM”, 2018 2nd International Conference on Data Science and Business Analytics (ICDSBA 2018), IEEE 978-1-5386-8431-3/18, pp. 55-58, 2018
29. M. Mohapatra, T.  De and A. K. Panda, “Performance Analysis of AlGaN/GaN Based HEMT for different gate structure (Normal gate and Tshaped gate)”, 2017 Devices for Integrated Circuit (DevIC), IEEE 978-1-5090-4724-6/17, pp.144-148, 2017
30. T. De, M. Mohapatra and A. K. Panda, “DC and RF Performance Analysis of AlGaN/GaN based HEMT”, IEEE 2nd International Conference on Communication, Control and Intelligent Systems (CCIS), IEEE 978-1-5090-3209-9/16, pp. 181-184, 2016
31. N. Shukla, M.Mohapatra, A.K.Panda, “Enhanced DC & RF Performance of InGaAs Based HEMT with Fully Quaternary InAlGaAs as Buffer and Barrier Layer”, International Conference on Control, Instrumentation, Communication & Computational Technologies (ICCICCT), 2014. pp. 917–922. ( 978-1-4799-4190-2/14/$31.00 ©2014 IEEE)
32. S.Sahu, M.Mohapatra, A.K.Panda, “Dual Gate Field Plated GaN HEMT with Improved Breakdown Characteristic”, International Conference on Control, Instrumentation, Communication & Computational Technologies (ICCICCT), 2014. pp.977–981.( 978-1-4799-4190-2/14/$31.00 ©2014 IEEE)
33. M. Mohapatra, A. Mumtaz and A.K.Panda, (2011) “Performance evaluation of GaSb/AlGaAs based high electron mobility transistors”, Conference on Advances in Recent Technologies in Communication and Computing, pp.249–252. (published in IET)
34. M. Mohapatra, A. Mohapatra and A.K.Panda, (2011) “Performance evaluation of 90nm InGaAs HEMTs”, Proceedings of 2011 International Conference on Signal Processing,Communication,  Computing and Networking Technologies, pp.291–294. (978-1-61284-653-8/11/$26.00 ©2011 IEEE) (Scopus indexed)
35. N.Shukla, M.Mohapatra, “Comparison of Ultra Short Gate Length InAlAs/InGaAs SG & DG HEMT”, Proceedings of 1^st national conference on devices and circuits, Organized by-IEEE ED-NIST students chapter, 2015. pp. 25–29.(ISBN:978-93-82208-75-4,2015)
36. C. Das, M. Mohapatra, L Sahoo “DC Characterization & Performance Evaluation of In_0.52Al_0.48As/In_0.53Ga_0.47As HEMT”, Proceedings of 1^st national conference on devices and circuits, Organized by-IEEE ED-NIST students chapter, 2015. pp. 6–8.(ISBN:978-93-82208-75-4,2015)
37. M. M. Badaik, M. Mohapatra, L Sahoo “Temperature Effect on mobility and DC Characteristics of Field-Plated AlGaN/GaN HEMT”, Proceedings of 1^st national conference on devices and circuits, Organized by-IEEE ED-NIST students chapter, 2015. pp. 13–16.(ISBN:978-93-82208-75-4,2015).
38. Tanmoy De, M. Mohapatra,“DC and Microwave Characteristics of AlGaN/GaN based HEMT”, Proceedings of 2^nd  national conference on devices and circuits, Organized by-IEEE ED-NIST students chapter, 2016. pp. 85–88. (ISBN:978-93-82208-78-5,2016)
39. P. Das, M. Mohapatra,“heterostructure based High SpeedAlGaAs/InGaAs/GaAs HEMT”, Proceedings of 2^nd  national conference on devices and circuits, Organized by-IEEE ED-NIST students chapter, 2016. pp. 89–92. (ISBN:978-93-82208-78-5,2016)
40. Samantaray, T. De and M.Mohapatra, “InAlAs/InGaAs/InP Based SG/DG HEMT”, Proceedings of 5^th national conference on devices and circuits, Organized by-IEEE ED-NIST students chapter, 2019. pp. 1–5.(ISBN:978-93-83060-12-2,2019)

Department of ETC,

Parala Maharaja Engineering College, Berhampur Odisha – 761003